Specification:

•  Transistor Polarity: NPN
•  Collector Emitter Voltage V(br)ceo: 30V
•  Power Dissipation Pd: 500mW
•  DC Collector Current: 800mA
•  DC Current Gain hFE: 100
•  Transistor Case Style: TO-18
•  No. of Pins: 3
•  Collector Emitter Voltage Vces: 400mV
•  Continuous Collector Current Ic Max: 800mA
•  Current Ic @ Vce Sat: 150mA
•  Current Ic Continuous a Max: 800mA
•  Current Ic hFE: 150mA
•  Full Power Rating Temperature: 25°C
•  Gain Bandwidth ft Min: 250MHz
•  Gain Bandwidth ft Typ: 250MHz
•  Hfe Min: 100
•  No. of Transistors: 1
•  Pin Configuration: a
•  Power Dissipation Pd: 500mW
•  Power Dissipation Ptot Max: 500mW
•  Termination Type: Through Hole
•  Voltage Vcbo: 60V