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Transistors, MOSFETS, IGBTs

Transistors, MOSFETS, IGBTs
Transistors, MOSFETS, IGBTs
25N120 IGBT 25N120 1200 Volt, 25 Ampere NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven.  Features of 25N1..
Rs. 120.00
Specification:    Transistor Polarity: NPN  Collector Emitter Voltage V(br)ceo: 30V  Power Dissipation Pd: 500mW  DC Collector Current: 800mA  DC Current Gain hFE: 100  Transistor Case Style: TO-18  No. of Pins: 3  Collector Emitter Voltage Vce..
Rs. 9.00
2N3904 is a common NPN bipolar junction transistor.   Features: Collector emitter voltage (Vce) of 40V Continuous collector current (Ic) of 200mA Power dissipation of 625mW Operating junction temperature range from -55°C to 150°C Collector emitter saturation voltage is les..
Rs. 9.00
The 2N3906 is a commonly-used PNP bipolar junction transistor intended for general purpose low-power amplifying or switching applications. It is designed for low electric current and power and medium voltage, and can operate at moderately high speeds. When looking at the flat side with the lea..
Rs. 9.00
The 2N5551 is an NPN amplifier Transistor with an amplification factor (hfe) of 80 when the collector current is 10mA. It also has decent switching characteristics (Transition frequency is 100MHz) hence can amplify low-level signals. Due to this feature, the transistor is commonly used for amplific..
Rs. 7.00
2N7000 is an N-Channel MOSFET in TO92 Package. It can replace BS170 Mosfet.   Datasheet: 2N7000 is an N-Channel MOSFET  ..
Rs. 21.00
BC107 is an NPN bipolar planner low power transistor which is mainly designed for general purpose switching and amplification purpose. Characteristics of the BC107B bipolar transistor: Type - n-p-n Collector-Emitter Voltage: 45 V Collector-Base Voltage: 50 V Emit..
Rs. 18.00
  BC 547 NPN transistor 45V 100mA hFE 150   Specifications: BIPOLAR TRANSISTOR, NPN, 45V, TO-92 Transistor Polarity: NPN Collector Emitter Voltage V(br)ceo: 45V Transition Frequency Typ ft: 300MHz Power Dissipation Pd: 625mW DC Collector Current: 100mA DC Curr..
Rs. 3.00
The BD136, BD138 and BD140 are silicon Epitaxial Planar PNP transistors mounted in Jedec SOT-32 plastic package, designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The complementary NPN types are the BD135 BD137 and BD139.Datasheet:   &n..
Rs. 15.00
The BT136 is a high performance and popular triac. It is suitable for uses in mains appliance control, motor control, dimming light, industrial lighting, heating and static switching. TRIAC,SENSITIVE GATE, 600V, 4A, TO-220AB Peak Repetitive Off-State Voltage, Vdrm:600V Datasheet:    ..
Rs. 26.00
BT139-800 is 16Amp rating Triac. Its Gate trigger voltage is 0.7V and reverse voltage rating is 800V. Its operational temperature range is from -40 to 150 °C. It comes in a 3 pin TO-220AB package. Specifications:  TRIAC, 16A, 800V, TO-220  Peak Repetitive Off-State Voltage, Vdr..
Rs. 30.00
BTA16-600 is 16Amp rating Triac. Its Gate trigger voltage is 1.5V and reverse voltage rating is 600V. Its operational temperature range is from -40 to 125 °C. Its package is a 3 pin TO-220AB. Specifications:  Peak Repetitive Off-State Voltage, Vdrm: 600V  Gate Trigger Current Max ..
Rs. 30.00
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