IRF9630 P-Channel Power MOSFET

IRFP9630 is a 6.5 Ampere, 200 Volt, 0.800 Ohm, P-Channel Power MOSFETs. These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. IRFP9630 power MOSFET is designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for other high-power switching devices. The high input impedance allows these types to be operated directly from integrated circuits.

Features of IRF9630 P-Channel Power MOSFET:

• 6.5A, 200V
• rDS(ON) = 0.800Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Drain to Source Voltage VDS -200 V
• Drain to Gate Voltage (RGS = 20kΩ) VDGR -200 V
• Continuous Drain Current ID -6.5 A, TC = 100oC ID -4 A
• Pulsed Drain Current IDM -26 A
• Gate to Source Voltage VGS ±20 V
• Maximum Power Dissipation PD 75 W
• Dissipation Derating Factor 0.6 W/oC
• Single Pulse Avalanche Energy Rating EAS 500 mJ
• Operating and Storage Temperature TJ, TSTG -55 to 150 oC